data sheet semiconductor http://www.yeashin.com 1 rev.02 20120305 MMBD3004A/c so t 23 unit:inch(mm) min max min max a 0.900 1.150 0.035 0.045 a1 0.000 0.100 0.000 0.004 a2 0.900 1.050 0.035 0.041 b 0.300 0.500 0.012 0.020 c 0.080 0.150 0.003 0.006 d 2.800 3.000 0.110 0.118 e 1.200 1.400 0.047 0.055 e1 2.250 2.550 0.089 0.100 e e1 1.800 2.000 0.071 0.079 l l1 0.300 0.500 0.012 0.020 0 8 0 6 0.550 ref 0.022 ref symbol dimensions in inches dimensions in millimeters 0.950 typ 0.037 typ mechanical data fast switching speed surface mount package ideally suited for automatic insertion high conductance high reverse breakdown voltage rating lead free/rohs compliant (note 3) features case: sot-23 case material: molded plastic. ul flammability classification rating 94v-0 moisture sensitivity: level 1 per j-std-020c terminals: solderable per mil-std-202, method 208 lead free plating (matte tin finish annealed over alloy 42 leadframe). polarity: see diagram marking: see diagrams below and page 2 ordering information: see below weight: 0.008 grams (approx.) mmbd3004c marking: kac MMBD3004A marking: kad top view characteristic symbol value unit repetitive peak reverse voltage v rrm 350 v working peak reverse voltage dc blocking voltage v rwm v r 300 v rms reverse voltage v r(rms) 212 v forward continuous current (note 2) i f 225 ma peak repetitive forward current (note 2) i frm 625 ma non-repetitive peak forward surge current @ t = 1.0 s @ t = 1.0s i fsm 4.0 1.0 a power dissipation (note 2) p d 350 mw thermal resistance junction to ambient air (note 2) r ja 357 c/w operating and storage temperature range t j ,t stg -65 to +150 c maximum ratings @ t a = 25 c unless otherwise specified notes: 1. short duration test pulse used to minimize self-heating effect. 2. part mounted on fr-4 board with recommended pad layout, which can be found on our website at http://www.diodes.com/datasheets/ ap02001.pdf. 3. no purposefully added lead. characteristic symbol min typ max unit test condition reverse breakdown voltage (note 1) v (br)r 350 v i r = 150 a forward voltage (note 1) v f 0.78 0.93 1.03 0.87 1.0 1.25 v i f = 20ma i f = 100ma i f = 200ma reverse current (note 1) i r 30 35 100 100 na a v r = 240v v r = 240v, t j = 150 c total capacitance c t 1.0 5.0 pf v r = 0v, f = 1.0mhz reverse recovery time t rr 50 ns i f = i r = 30ma, i rr = 3.0ma, r l = 100 electrical characteristics @ t a = 25c unless otherwise specified, per element h
http://www.yeashin.com 2 rev.02 20120305 device characteristics MMBD3004A/c 0 400 800 1200 1600 2000 i , instantaneous forward current ( a) f m v , instantaneous forward voltage (mv) fi g .2 t y pical forward characteristics, per element f 100 1.0 10 0.1 0.01 1000 t=150c j t=25c j 0 50 100 150 200 250 300 350 v , instantaneous reverse voltage (v) fi g .3 t y pical reverse characteristics, per element r 100 1.0 10 0.1 0.01 0.001 1000 t = 150 c j t=75c j t=25c j 0.01 0.1 1.0 10 100 c , total capacitance (pf) t fig. 4 typical total capacitance vs. reverse volta g e, per element v , reverse voltage (v) r 5.0 400 t , ambient temperature, (c) fi g . 1 power deratin g curve, total packa g e a p , power dissipation (mw) d 200 100 300 0 5 00 0 100 200
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